Electron impact excitation of the low-lying 4s [3/2]1 and 4s'[1/2]1 levels in Ar atom

29th International Conference on Photonic, Electronic, and Atomic Collisions

Mochizuki, Y.^1 ; Murai, H.^1 ; Kato, H.^1 ; Hoshino, M.^1 ; Tanaka, H.^1

Department of Physics, Sophia University, Chiyoda-ku, Tokyo

102-8554, Japan^1

关键词: Ar atom;    Differential cross section;    Electron energy range;    Electron-impact excitation;    Integral cross-sections;    Optically allowed transition;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/635/5/052048/pdf
DOI  :  10.1088/1742-6596/635/5/052048

来源: IOP

【 摘 要 】

We report measurements on differential cross sections (DCSs) for electron impact excitation of the low-lying levels, 4s[3/2]1and 4s'[1/2]1, of the optically-allowed transitions in Ar atom in the electron energy range of 15 - 300 eV. Integral cross sections (ICSs) for these transitions obtained from the measured DCSs are compared with the BEf-scaled Born ICS.