Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Liyana, V.P.^1 ; Stephania, A.M.^1 ; Shiju, K.^1 ; Predeep, P.^1

Laboratory for Molecular Photonics and Electronics (LAMP), Department of Physics, National Institute of Technology, Calicut, Kerala

673601, India^1

关键词: Bottom contacts;    Channel widths;    Comparative analysis;    Easy fabrication;    Large-area electronics;    Operational voltage;    Poly(methyl methacrylate) (PMMA);    Source-drain electrodes;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012029/pdf
DOI  :  10.1088/1742-6596/619/1/012029

来源: IOP

【 摘 要 】

Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (VT), on-off ratio (Ion/Ioff) and their comparative analysis is reported.