Changes in screen-printed ZnO/CuInSe2 p-n junction before and after laser ablation

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Ogurcovs, A.^1 ; Gerbreders, Vj^1 ; Tamanis, E.^1 ; Gerbreders, A.^1

G. Libert's Innovative Microscopy Centre, Daugavpils University, 1 Parades Str., Daugavpils

LV-5401, Latvia^1

关键词: Conductive properties;    Exponential decays;    High-temperature synthesis;    Laser ablation technique;    Measurements of;    Micro-structural properties;    Screen printing technique;    Semiconductor powders;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012017/pdf
DOI  :  10.1088/1742-6596/619/1/012017

来源: IOP

【 摘 要 】

In the experiments, ZnO and CuInSe2semiconductor powders were used (the latter produced by the high-temperature synthesis method). Microstructural properties of the powders were analyzed using X-Ray diffraction and SEM. The experimental ZnO/CuInSe2samples were prepared by the screen printing technique. The V-I measurements of the samples indicated the presence of a p-n junction in the ZnO/CuInSe2 contact zone. The samples were exposed to artificial solar radiation, during which an exponential decay of photo-emf was observed. It was shown that the starting conductive properties of the p-n junction restores in ∼ 15 min after the exposition. Laser ablation technique was applied to ZnO/CuInSe2 p-n junction with purpose to improve its performance and quality. After several attempts, significant changes in electrical properties of samples was observed. Improvenent of p-n junction can be achieved only at single attempt at certain amount of delivered energy. Futherablation attempt leads to degradation of p-n junction of samples.