Photoelectric conversion characteristics of c-Se-based thin-film photodiodes in imaging device

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Imura, S.^1 ; Kikuchi, K.^1 ; Miyakawa, K.^1 ; Ohtake, H.^1 ; Kubota, M.^1

NHK Science and Technology Research Laboratories, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan^1

关键词: Applied voltages;    Heterojunction photodiodes;    High resolution image;    High-efficiency;    Image pickup tubes;    Low applied voltages;    Photoelectric conversion;    Photoelectric conversion characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012008/pdf
DOI  :  10.1088/1742-6596/619/1/012008

来源: IOP

【 摘 要 】

Herein, we report the use of high-efficiency crystalline-selenium-based (c-Se-based) thin-film heterojunction photodiodes in imaging devices. As a novel experiment, we use an image pickup tube with a photoelectric conversion layer consisting of n-gallium oxide (Ga2O3)/p-c-Se heterojunction photodiodes to obtain high-resolution images at a relatively low applied voltage. We reduce the thickness of the Ga2O3layer to expand the depletion layer into the c-Se layer at a lower applied voltage. In addition, Sn-doping of the Ga2O3layer effectively increases the carrier concentration, thereby allowing the photodiode to operate at lower voltage.