Thin film germanium on silicon created via ion implantation and oxide trapping

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Anthony, R.^1 ; Knights, A.P.^1

Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton

ON

L8S 4L7, Canada^1

关键词: Analytical description;    Buried oxides;    Germanium on silicons;    Infrared wavelengths;    Oxidation conditions;    Rutherford back-scattering;    Silicon on insulator wafers;    Thin layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012001/pdf
DOI  :  10.1088/1742-6596/619/1/012001

来源: IOP

【 摘 要 】

We present a novel process for integrating germanium with silicon-on-insulator (SOI) wafers. Germanium is implanted into SOI which is then oxidized, trapping the germanium between the two oxide layers (the grown oxide and the buried oxide). With careful control of the implantation and oxidation conditions this process creates a thin layer (current experiments indicate up to 20-30nm) of almost pure germanium. The layer can be used potentially for fabrication of integrated photo-detectors sensitive to infrared wavelengths, or may serve as a seed for further germanium growth. Results are presented from electron microscopy and Rutherford back-scattering analysis, as well as preliminary modelling using an analytical description of the process.