Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

11th International Workshop on Positron and Positronium Chemistry

物理学;化学

Arutyunov, N.^1,2,4 ; Emtsev, V.^2 ; Krause-Rehberg, R.^1 ; Elsayed, M.^1,3 ; Kessler, C.^1 ; Kozlovski, V.^5 ; Oganesyan, G.^2

Martin Luther University Halle, Department of Physics, Halle

06120, Germany^1

Ioffe Physico-Technical Institute, St. Petersburg

194021, Russia^2

Minia Univrsity, Faculty of Science, Physics Department, Minia

61519, Egypt^3

Inst. Ion-Plasma and Laser Technol., Inst. of Electronics, Tashkent

700187, Uzbekistan^4

St. Petersburg State Polytechnic University, St. Petersburg

195251, Russia^5

关键词: Hall effect measurement;    Low temperatures;    Phosphorus-doped;    Positron annihilation lifetime spectroscopy;    Positron lifetime;    Temperature intervals;    Temperature range;    Vacancy complexes;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/618/1/012013/pdf
DOI  :  10.1088/1742-6596/618/1/012013

来源: IOP

【 摘 要 】

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K-300 K and by low-temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C-700 °C; they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2≤ 60%) ∼ 280 ps, attributed to these centers, suggests a relaxed configuration involving two vacancies. The enthalpy and entropy of annealing of these centers are Ea∼ 1.05(0.21) eV and ΔSm≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.