Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations

Euro-TMCS I: Theory, Modelling and Computational Methods for Semiconductors

物理学;计算机科学

García, S.^1 ; Íñiguez-De-La-Torre, I.^1 ; García-Pérez, Ó.^1 ; Mateos, J.^1 ; González, T.^1 ; Pérez, S.^1

Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, Salamanca

37007, Spain^1

关键词: Device temperature;    Different substrates;    Growth process;    Heat diffusions;    High thermal conductivity;    Monte Carlo simulators;    Thermal boundary resistance;    Thermal methods;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/609/1/012005/pdf
DOI  :  10.1088/1742-6596/609/1/012005

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the influence of the thermal boundary resistance (TBR) that appears in the growth process of dissimilar materials. We analyse the effect of the TBR when the diode is grown on two substrates, Si and SiC. As a conclusion, we can state that the TBR is a limiting factor to the thermal flow that becomes more relevant for substrates with high thermal conductivities.