Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

15th Latin American Workshop on Plasma Physics; 21st IAEA TM on Research Using Small Fusion Devices

Mousinho, A.P.^1 ; Mansano, R.D.^1

Laboratório de Sistemas Integráveis, Departamento de Engenharia de Sistemas Eletrônicos, Escola Politécnica, Universidade de São Paulo, 158, Avenida Professor Luciano Gualberto, trav. 3, São Paulo, SP, Brazil^1

关键词: Aligned carbon nanotubes;    Electrostatic shields;    High density plasma chemical vapor deposition;    High reproducibility;    Micro Raman Spectroscopy;    Photolithography process;    Plasma densification;    Radial breathing mode;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/591/1/012054/pdf
DOI  :  10.1088/1742-6596/591/1/012054

来源: IOP

【 摘 要 】

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.