The study of porous silicon powders by capillary condensation

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Belorus, A.O.^1 ; Maraeva, E.V.^1 ; Spivak, Yu M.^1 ; Moshnikov, V.A.^1,2

St Petersburg Electrotechnical University LETI, 5 Prof. Popova str., St.-Petersburg

197376, Russia^1

St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St.Petersburg

195251, Russia^2

关键词: Capillary condensation;    Doping levels;    N-type conductivity;    Silicon powders;    Silicon substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012017/pdf
DOI  :  10.1088/1742-6596/586/1/012017

来源: IOP

【 摘 要 】

Gas adsorption and capillary condensation phenomena were studied in powders of porous silicon with different doping levels of the silicon substrate of n-type conductivity in various conditions. Specific surface area and the rated pore size distribution were determined for porous silicon with complex texture by the capillary condensation method. It is shown that the samples obtained in silicon with a higher doping level have a higher value of specific surface area.