Transient and Post-irradiation Response of Optoelectronic Devices to Ionizing Radiation

3rd International Conference on Mathematical Modeling in Physical Sciences

物理学;数学

Haider, F.A.A.^1 ; Chee, F.P.^1

Department of Physics with Electronics, Faculty of Science and Natural Resources, University Malaysia Sabah, Kota Kinabalu, Malaysia^1

关键词: Current transfer ratio;    Damage cascades;    Deleterious effects;    Devices under tests;    Energetic photons;    In-situ measurement;    Optoelectronic systems;    Total Ionizing Dose;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/574/1/012019/pdf
DOI  :  10.1088/1742-6596/574/1/012019

来源: IOP

【 摘 要 】

Space and ground level electronic equipment with semiconductor devices are subjected to the deleterious effects by radiation. This paper is attempted to present the transient and post-irradiation response of optoelectronic devices to gamma (γ) rays utilizing cobalt-60. In situ measurements were made on the devices under test (DUTs) up to a total dose of 60 krad followed by a post-irradiation not in-flux test for eight hours. Current transfer ratio (CTR) with is the vital merit of the optoelectronic system is found to decrease remarkably with the absorbed dose. This degradation is induced by the interaction of the energetic photons from gamma rays via two main mechanisms. The dominant effect is the mechanism by ionization while the secondary is by displacement. This radiation effect is found to arouse either a permanent or temporarily damage in the DUTs depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by gamma rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation. The full damage cascade phenomenon in the DUTs is calculated via the simulation.