Single-electron transitions in one-dimensional native nanostructures

27th International Conference on Low Temperature Physics

Reiche, M.^1 ; Kittler, M.^2 ; Schmelz, M.^3 ; Stolz, R.^3 ; Pippel, E.^1 ; Uebensee, H.^4 ; Kermann, M.^4 ; Ortlepp, T.^4

Max Planck Institute of Microstructure Physics, Halle, Germany^1

BTU CS, JointLab IHP/BTU, Cottbus, Germany^2

Leibniz Institute of Photonic Technology, Jena, Germany^3

CIS Research Institute of Microsensorics and Photovoltaics, Erfurt, Germany^4

关键词: Dislocation arrays;    Dislocation core;    Dislocation lines;    High strains;    Low-temperature measurements;    Quantization of energy;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/568/5/052024/pdf
DOI  :  10.1088/1742-6596/568/5/052024

来源: IOP

【 摘 要 】

Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.