Si nanoparticles embedded in pseudo binaries alloys with AI2O3

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Vitanov, P.^1 ; Harizanova, A.^1 ; Ivanova, T.^1 ; Ulyashin, A.^2

Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria^1

SINTEF Materials and Chemistry, Metallurgy Department, Forskningsveien 1, Blindern Oslo

NO-0314, Norway^2

关键词: Additional annealing;    Dielectric matrixes;    Nanoparticle (NPs);    P type and N types;    Quartz substrate;    Spin-coating deposition;    Uniform distribution;    Visible spectral range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012058/pdf
DOI  :  10.1088/1742-6596/558/1/012058

来源: IOP

【 摘 要 】

The present paper reports the incorporation of Si nanoparticles (NPs) in (Al2O3)x(b2O3)1-xfilms. A new approach for involving Si NPs (20 nm) p+doped into sol solution was used. After spin coating deposition and additional annealing at 850°C, (Al2O3)x(b2O3)1-x films with Si NPs have been obtained with thickness of 75 and 120 nm. The (Al2O3)x(b2O3)1-xfilms were deposited on p-type and n-type Si wafers. The optical study reveals that Si NPs embedded in (Al2O3)x(b2O3)1-xleads to higher absorption in the visible spectral range compared to dielectric layer without nanoparticles. AFM studies show that the incorporated Si nanoparticles into the dielectric layer have probably a uniform distribution on film surface. This conclusion is confirmed by SEM observation. The current - voltage (I-V) characteristics of a structure (Al2O3)x(b2O3)1-xlayer with Si NPs on p- type Si shows an ohmic type of conductivity. The sheet resistance is 480 Ohm/sq respectively, when the same layer is deposited on quartz substrate. This work presents a new technological approach for integration of Si NPs in dielectric matrix of (Al2O3)x(b2O3)1-x. The results can find applications for formation of ultra thin emitter for photodiodes and Si solar cells.