Coated Porous Si for High Performance On-Chip Supercapacitors

14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications

物理学;能源学

Grigoras, K.^1 ; Keskinen, J.^1 ; Grönberg, L.^1 ; Ahopelto, J.^1 ; Prunnila, M.^1

VTT Technical Research Centre of Finland, P. O. Box 1000, VTT Espoo

FI-02044, Finland^1

关键词: Charge/discharge cycle;    Double layer capacitor;    High aspect ratio;    High power density;    Orders of magnitude;    Silicon electrode;    Supercapacitor electrodes;    Volumetric capacitance;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/557/1/012058/pdf
DOI  :  10.1088/1742-6596/557/1/012058

来源: IOP

【 摘 要 】

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.