AlN thin film growth using electron cyclotron resonance reactive sputtering

14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications

物理学;能源学

Hung, N.H.^1 ; Oguchi, H.^1 ; Kuwano, H.^1

Department of Nanomechanics, Tohoku University, Japan^1

关键词: AlN thin films;    Crystallinities;    Root mean square roughness;    Si substrates;    Sputtering methods;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/557/1/012047/pdf
DOI  :  10.1088/1742-6596/557/1/012047

来源: IOP

【 摘 要 】

In this report, we investigated conditions to deposit stoichiometric aluminium nitride (AlN) thin films grown on (100)-oriented Si substrates under various Ar/N2gas flow rates at a wide range of temperature from room temperature (RT) to 350°C using electron cyclotron resonance (ECR) reactive sputtering. This study revealed that stoichiometric of thin film can be controlled by N2/Ar flow rate and that stoichiometric N/Al 1 was archived at N2/Ar 2. This study also revealed that crystallinity can be controlled by substrate temperature. From RT to 200°C, thin films were amorphous or poly-crystal, at 350°C however, thin film was mainly [110] and [100] AlN. Obtained thin films are densely packed and have very low root mean square (RMS) roughness of 0.41 nm which is much less than other sputtering methods.