Generalised effective mass theory of sub-surface scanning tunnelling microscopy: application to weakly bound impurity states

4th Workshop on Theory, Modelling and Computational Methods for Semiconductors

物理学;计算机科学

Roy, Mervyn^1 ; Maksym, P.A.^1

Department of Physics and Astronomy, University of Leicester, Leicester, LE1 7RH, United Kingdom^1

关键词: Effective-mass theory;    Electrostatic effect;    Image charges;    Impurity state;    Shallow impurities;    Simulated images;    STM images;    Sub-surfaces;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/526/1/012008/pdf
DOI  :  10.1088/1742-6596/526/1/012008

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

We apply our generalised effective mass theory of sub-surface scanning tunnelling microscopy (STM) (Phys. Rev. B 19, 195304 (2010)) to simulate STM images of electronic states localised around sub-surface Si dopant atoms in GaAs. In the case of these shallow impurity-states, we demonstrate that electrostatic effects from image-charges and from the STM tip have a strong influence on the sub-surface state and hence the simulated image.