Growth enhancement effects of radish sprouts: atmospheric pressure plasma irradiation vs. heat shock

26th Symposium on Plasma Sciences for Materials

物理学;材料科学

Sarinont, T.^1 ; Amano, T.^2 ; Kitazaki, S.^3 ; Koga, K.^1 ; Uchida, G.^4 ; Shiratani, M.^1 ; Hayashi, N.^3

Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, 819-0395, Fukuoka, Japan^1

Department of Electrical Engineering, School of Engineering, Kyushu University, 744 Motooka, Fukuoka, Nishi-ku, 819-0395, Japan^2

Interdisciplinary Graduate School of Engineering Science, Kyushu University, 6-1 Kasuga-kouen, 816-8580 Fukuoka, Japan^3

Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Osaka, Ibaraki, 567-0047, Japan^4

关键词: Atmospheric air;    Atmospheric pressure plasmas;    Average length;    Growth enhancement;    Maximum temperature;    Plasma irradiations;    Raphanus sativus;    Short durations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012017/pdf
DOI  :  10.1088/1742-6596/518/1/012017

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We compare growth enhancement effects due to atmospheric air dielectric barrier discharge plasma irradiation and heat shock to seeds of radish sprouts (Raphanus sativus L.). Interactions between radicals and seeds in a short duration of 3 min. lead to the growth enhancement of radish sprouts in a long term of 7 days and the maximum average length is 3.7 times as long as that of control. The growth enhancement effects become gradually weak with time, and hence the ratio of the average length for plasma irradiation to that for control decreases from 3.7 for the first day to 1.3 for 7 day. The average length for heat shock of 60°C for 10 min. and 100°C for 3 min. is longer than that for control, and the maximum average length is 1.3 times as long as that of control. Heat shock has little contribution to the growth enhancement due to plasma irradiation, because the maximum temperature due to plasma irradiation is less than 60°C.