Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

26th Symposium on Plasma Sciences for Materials

物理学;材料科学

Ichida, D.^1 ; Uchida, G.^2 ; Seo, H.^1 ; Kamataki, K.^3 ; Itagaki, N.^1,4 ; Koga, K.^1 ; Shiratani, M.^1

Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka, Nishi-ku, 819-0395, Japan^1

Jointing and Welding Reserch Institute, Osaka University, 11-1 Mihogaoka, Osaka, Ibaraki, 567-0047, Japan^2

Faculty of Arts and Science, Kyushu University, 744 Motooka, Fukuoka, Nishi-ku, 819-0395, Japan^3

PRESTO Japan Science and Technology Agency, Gobancho, Tokyo Chiyoda-ku, 102-0076, Japan^4

关键词: Film crystallinity;    Ge Nanoparticles;    High-pressure condition;    Peak frequencies;    Radio frequency magnetron sputtering method;    RF magnetron sputtering method;    Substrate temperature;    X-ray diffraction spectrum;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012002/pdf
DOI  :  10.1088/1742-6596/518/1/012002

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.