18th International Summer School on Vacuum, Electron and Ion Technologies | |
Electrical transport in epitaxial and polycrystalline thin LSMO films | |
Štrbík, V.^1 ; Blagoev, B.^2 ; Mateev, E.^2 ; Nurgaliev, T.^2 | |
Institute of Electrical Engineering, Slovak Academy of Sciences, 9 Dúbravská cesta, 841 04 Bratislava, Slovakia^1 | |
Acad. E. Djakov Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria^2 | |
关键词: Conductance channels; Electrical transport; Ferromagnetic grain; Optimal conditions; Spin-polarized tunneling; Temperature dependence; Temperature independents; Thermally activated; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/514/1/012042/pdf DOI : 10.1088/1742-6596/514/1/012042 |
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来源: IOP | |
【 摘 要 】
We report studies on the electrical transport in La0.7Sr0.3MnO3(LSMO) thin films of different quality. The temperature dependence of the resistivity (ρ-T) of high-quality LSMO films (ρ 10 mΩ cm) can be described by a polynomial approximation based on electron-magnon, electron-phonon, electron-electron and temperature-independent scatterings. On the other hand, the ρ-T dependence of polycrystalline LSMO films prepared under less than optimal conditions (ρ 1 Ω cm) can be described by a two-conductance-channel model. The first one is a spin-polarized tunneling between neighboring ferromagnetic grains with good contacts, while the other is implemented via a thermally-activated transport through an insulator (semiconductor) phase located mainly at the grain boundaries or between grains.
【 预 览 】
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