Electrical transport in epitaxial and polycrystalline thin LSMO films

18th International Summer School on Vacuum, Electron and Ion Technologies

Štrbík, V.^1 ; Blagoev, B.^2 ; Mateev, E.^2 ; Nurgaliev, T.^2

Institute of Electrical Engineering, Slovak Academy of Sciences, 9 Dúbravská cesta, 841 04 Bratislava, Slovakia^1

Acad. E. Djakov Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria^2

关键词: Conductance channels;    Electrical transport;    Ferromagnetic grain;    Optimal conditions;    Spin-polarized tunneling;    Temperature dependence;    Temperature independents;    Thermally activated;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/514/1/012042/pdf
DOI  :  10.1088/1742-6596/514/1/012042

来源: IOP

【 摘 要 】

We report studies on the electrical transport in La0.7Sr0.3MnO3(LSMO) thin films of different quality. The temperature dependence of the resistivity (ρ-T) of high-quality LSMO films (ρ 10 mΩ cm) can be described by a polynomial approximation based on electron-magnon, electron-phonon, electron-electron and temperature-independent scatterings. On the other hand, the ρ-T dependence of polycrystalline LSMO films prepared under less than optimal conditions (ρ 1 Ω cm) can be described by a two-conductance-channel model. The first one is a spin-polarized tunneling between neighboring ferromagnetic grains with good contacts, while the other is implemented via a thermally-activated transport through an insulator (semiconductor) phase located mainly at the grain boundaries or between grains.