Optical emission spectroscopy of Aluminum Nitride thin films deposited by Pulsed Laser Deposition

15th International Congress on Plasma Physics; 13th Latin American Workshop on Plasma Physics

Pérez, J.A.^1,2 ; Vera, L.P.^1,2 ; Riascos, H.^1,3 ; Caicedo, J.C.^4

Universidad Tecnológica de Pereira, Grupo Plasma Láser y Aplicaciones, Colombia^1

Ingenieria Fisica, Universidad Tecnológica de Pereira, Colombia^2

Departamento de Fisica, A.A 097, Universidad Tecnológica de Pereira, Colombia^3

Grupo Peliculas Delgadas, Universidad Del Valle, Cali, Colombia^4

关键词: Aluminum nitride thin films;    Different pressures;    Electronic temperature;    Emission spectrums;    Laser interaction;    Local thermodynamic equilibrium;    Nd:YAG pulsed laser;    Relative intensity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/511/1/012078/pdf
DOI  :  10.1088/1742-6596/511/1/012078

来源: IOP

【 摘 要 】

In this work we study the Aluminium Nitride plasma produced by Nd:YAG pulsed laser, (λ 1064 nm, 500 mJ, τ = 9 ns) with repletion rate of 10 Hz. The laser interaction on Al target (99.99%) under nitrogen gas atmosphere generate a plasma which is produced at room temperature; with variation in the pressure work from 0.53 Pa to 0.66 Pa matching with a applied laser fluence of 7 J/cm2.The films thickness measured by profilometer was 150 nm. The plasma generated was at different pressures was characterized by Optical Emission Spectroscopy (EOS). From emission spectra obtained ionic and atomic species were observed. The plume electronic temperature has been determined by assuming a local thermodynamic equilibrium of the emitting species. Finally the electronic temperature was calculated with Boltzmann plot from relative intensities of spectral lines.