Carbon arc plasma: characterization and synthesis of nanosized SiC

15th International Congress on Plasma Physics; 13th Latin American Workshop on Plasma Physics

Lbdz´, O.^1 ; Huczko, A.^1 ; Gawraczyn´ski, J.^1 ; Lange, H.^1 ; Czosnek, C.^2 ; Janik, J.F.^2

Department of Chemistry, Warsaw University, 02-093 Warsaw, Poland^1

AGH University of Science and Technology, 30-059 Cracow, Poland^2

关键词: Carbon arc;    Direct plasma;    Experimental system;    High temperature;    Nano powders;    SiC formation;    Spectroscopy measurements;    Wet chemical analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/511/1/012068/pdf
DOI  :  10.1088/1742-6596/511/1/012068

来源: IOP

【 摘 要 】

Silicon carbide SiC is an important ceramic material with many applications. The nanomaterials can posess novel electronic and mechanical properties. Thus, we attempted to produce SiC nanopowder via a fast, one-step direct plasma synthesis. Two experimental systems were tested regarding the efficiency of SiC formation (for comparison): (i) arc plasma and (ii) high-temperature aerosol route. The products were characterized by wet chemical analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Almost total plasma conversion of starting Si-bearing reactants (Si, SiO and SiO2) was achieved with SiC nanopowder (well below 100 nm) as a main product. From the emission spectroscopy measurements the arc plasma temperatures were evaluated to be within 3500-6000 K.