Radiation damage thin coating of silicon carbide

25th IUPAP Conference on Computational Physics

物理学;计算机科学

Bondareva, Anna^1 ; Zmievskaya, Galina^1 ; Levchenko, Tatjana^2

M. V. Keldysh Institute of Applied Mathematics, RAS, Moscow, Russia^1

VNI Geosystem Russian Federal Center, Moscow, Russia^2

关键词: Acoustic phonons;    Computer experiment;    Computer modeling;    Gas penetration;    Indirect interactions;    Long-range potential;    Nonequilibrium phase transitions;    Porosity formation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/510/1/012010/pdf
DOI  :  10.1088/1742-6596/510/1/012010

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

This paper presents computer experiments studies interaction of radiation (ions Xe++ gas with keV energy) with crystal lattice of «SiC/metal» substrate. Properties of substrate are altered due to porosity and stresses formation into thin layers covering silicon carbide as a result of inert gas flux penetration. First, the stochastic model of non-equilibrium phase transitions (or nucleation of defects) in nanomaterials is presented. Behavior of gaseous bubbles in thin layers are tested and corresponding details computer modeling are discussed. Secondly, the analytical models of Gibbs free energy implanted microdefects as well as their Brownian motion in long-range potentials of indirect interaction between gaseous bubbles into lattice through acoustic phonons are concretized. These models predict stress from gas penetration as a result of damaging in form of gaseous bubbles (named here «blisters» ). New emphasis is on numerical modeling includes stochastic model clustering of defects as the diffusion of Markov processes. Finally, the mechanism of porosity formation in materials such as silicon carbide can be accounted as the ways to improve solidity and fracture toughness and hardening of materials.