A HAXPES measurement system up to 15 keV developed at BL46XU of SPring-8

1st Conference on Light and Particle Beams in Materials Science 2013

物理学;材料科学

Oji, H.^1,2 ; Cui, Y.-T.^1 ; Koganezawa, T.^1 ; Isomura, N.^3 ; Dohmae, K.^3 ; Son, J.-Y.^1,2

Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan^1

SPring-8 Service Co., Ltd., 1-20-5 Kouto, Shingu, Tatsuno, Hyogo 679-5165, Japan^2

Toyota Central RandD Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan^3

关键词: Chemical state analysis;    Fermi edge;    Measurement system;    Photon energy;    Si wafer;    SiO2 thin films;    SPring-8;    Total energy;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/502/1/012006/pdf
DOI  :  10.1088/1742-6596/502/1/012006

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In order to achieve much larger probing depth than the conventional HAXPES system of BL46XU, a HAXPES measurement system equipped with a cylindrical sector analyzer, Focus HV-CSA 300/15 has been developed, by which photoelectrons with the kinetic energy up to 15 keV can be analyzed. The Si 1s peak which comes from the buried Si wafer underneath the 60 nm SiO2 thin films can be clearly identified in the spectra excited by the photon energy of 14 keV, indicating the much larger probing depth than the conventional HAXPES measurement with 8 keV X-ray. The total energy resolution estimated from the Au Fermi edge spectra was ∼0.5 eV, which is sufficient for the chemical state analysis of materials.