会议论文详细信息
18th APS-SCCM; 24th AIRAPT
Origin of the volume collapse under pressure in elemental Dy
Lim, J.^1 ; Fabbris, G.^1,2 ; Haskel, D.^2 ; Schilling, J.S.^1
Department of Physics, Washington University, St. Louis
MO
63130, United States^1
Advanced Photon Source, Argonne National Laboratory, Argonne
IL
60439, United States^2
关键词: Band formations;    Conduction electrons;    Critical pressures;    Electron systems;    High pressure resistivity;    Kondo volume collapse model;    Possible mechanisms;    Primary mechanism;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/500/19/192009/pdf
DOI  :  10.1088/1742-6596/500/19/192009
来源: IOP
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【 摘 要 】

Most lanthanide metals exhibit a volume collapse at a critical pressure Pc; for Dy this pressure is ∼73 GPa. The primary mechanism responsible for the volume collapse is a matter of debate and may involve the 4/ electrons themselves or be the result of simple pressure-induced s-d transfer in the conduction electrons. Possible mechanisms involving the 4/ electron system include: (i) valence increase, (ii) 4/ band formation, and (iii) increased 4/-conduction electron hybridization leading to a Kondo volume collapse. The present high pressure resistivity experiments on the dilute magnetic alloy Y(Dy) to 114 GPa give evidence for the validity of the Kondo volume collapse model for elemental Dy.

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