18th APS-SCCM; 24th AIRAPT | |
Origin of the volume collapse under pressure in elemental Dy | |
Lim, J.^1 ; Fabbris, G.^1,2 ; Haskel, D.^2 ; Schilling, J.S.^1 | |
Department of Physics, Washington University, St. Louis | |
MO | |
63130, United States^1 | |
Advanced Photon Source, Argonne National Laboratory, Argonne | |
IL | |
60439, United States^2 | |
关键词: Band formations; Conduction electrons; Critical pressures; Electron systems; High pressure resistivity; Kondo volume collapse model; Possible mechanisms; Primary mechanism; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/500/19/192009/pdf DOI : 10.1088/1742-6596/500/19/192009 |
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来源: IOP | |
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【 摘 要 】
Most lanthanide metals exhibit a volume collapse at a critical pressure Pc; for Dy this pressure is ∼73 GPa. The primary mechanism responsible for the volume collapse is a matter of debate and may involve the 4/ electrons themselves or be the result of simple pressure-induced s-d transfer in the conduction electrons. Possible mechanisms involving the 4/ electron system include: (i) valence increase, (ii) 4/ band formation, and (iii) increased 4/-conduction electron hybridization leading to a Kondo volume collapse. The present high pressure resistivity experiments on the dilute magnetic alloy Y(Dy) to 114 GPa give evidence for the validity of the Kondo volume collapse model for elemental Dy.
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Origin of the volume collapse under pressure in elemental Dy | 3056KB | ![]() |