Effect of pressure on some optical properties of GaxIn1?xP semiconductors

18th APS-SCCM; 24th AIRAPT

Vyas, P.S.^1 ; Gajjar, P.N.^2 ; Jani, A.R.^3

V. P. and R. P. T. P. Science College, Vallabh Vidyanagar, Gujarat

388 120, India^1

Department of Physics, University School of Sciences, Gujarat University, Gujarat, Ahmedabad

380 009, India^2

Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat

388 120, India^3

关键词: Effect of pressure;    Electronic-polarizability;    Equation of state;    Exchange and correlation effects;    Increase in pressure;    Local field corrections;    Screening functions;    Virtual crystal approximation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/500/18/182042/pdf
DOI  :  10.1088/1742-6596/500/18/182042

来源: IOP

【 摘 要 】

A theoretical procedure is presented for the study of optical properties of ternary alloy GaxIn1-xP. The calculations are based on the pseudopotential formalism in which local potential coupled with the virtual crystal approximation (VCA) is applied to evaluate the effect of pressure on the optical properties like refractive index, electronic polarizability, plasmon energy, dielectric constant and equation of state for gallium concentration x = 0, 0.25, 0.50, 0.75 and 1 of the ternary alloy GaxIn1-xP. To incorporate the screening effect, local field correction functions due to Hartree, Taylor, Ichimaru et al. and Nagy are employed. The refractive index, electronic polarizability and dielectric constant computed for the parent binary compounds GaP and InP are in satisfactory agreement with the experimental report. It is seen that the refractive index of GaxIn1-xP decreases nonlinearly with the increase in pressure. The results obtained using Hartree's screening functions are not very close to the experimental data as it does not include any exchange and correlation effects. Overall good agreement with the experimental and other theoretical findings confirms the application.