The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation

18th APS-SCCM; 24th AIRAPT

Pizani, P.S.^1 ; Jasinevicius, R.G.^2

Universidade Federal de São Carlos, Departamento de Física, C. P. 676, São Carlos, SP

13565-905, Brazil^1

Departamento de Engenharia Mecânica, Escola de Engenharia de São Carlos, Universidade de São Paulo, C.P. 359, São Carlos, São Paulo

CEP 13566-590, Brazil^2

关键词: High compressions;    Mechanical impacts;    Multiphase state;    Non-hydrostatic pressure;    Structural phase transition;    Structural phasis;    Wurtzites;    Zinc blende;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/500/18/182032/pdf
DOI  :  10.1088/1742-6596/500/18/182032

来源: IOP

【 摘 要 】

Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structural phases localized in different micrometric regions of the same sample: the zinc blende to possibly wurtzite structural phase transition and the generation of a multiphase state.