Modelling of MOCVD Reactor: New 3D Approach

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Raj, E.^1 ; Lisik, Z.^1 ; Niedzielski, P.^1 ; Ruta, L.^1 ; Turczynski, M.^1 ; Wang, X.^2 ; Waag, A.^2

Lodz University of Technology, Department of Semiconductor and Optoelectronic Devices, Wolczanska 211/215, 90-924 Lodz, Poland^1

Institute of Semiconductor Technology, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig, Germany^2

关键词: 3D models;    MOCVD reactor;    Rotating disc;    Showerhead;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012019/pdf
DOI  :  10.1088/1742-6596/494/1/012019

来源: IOP

【 摘 要 】

The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.