A Semiconductor Device Thermal Model Taking into Account Non-linearity and Multhipathing of the Cooling System

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Górecki, K.^1 ; Zare¸bski, J.^1

Gdynia Maritime University, Department of Marine Electronics, Morska 83, Gdynia, Poland^1

关键词: Cooling conditions;    Measurements of;    Multipath;    Steady state;    Thermal model;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012008/pdf
DOI  :  10.1088/1742-6596/494/1/012008

来源: IOP

【 摘 要 】

The paper is devoted to modelling thermal properties of semiconductor devices at the steady state. The dc thermal model of a semiconductor device taking into account the multipath heat flow is proposed. Some results of calculations and measurements of thermal resistance of a power MOSFET operating at different cooling conditions are presented. The obtained results of calculations fit the results of measurements, which proves the correctness of the proposed model.