Normally-off GaN Transistors for Power Applications

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Hilt, O.^1 ; Bahat-Treidel, E.^1 ; Brunner, F.^1 ; Knauer, A.^1 ; Zhytnytska, R.^1 ; Kotara, P.^1 ; Wuerfl, J.^1

Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany^1

关键词: Device operations;    Gan transistors;    Low dispersions;    On-state resistance;    Potential barriers;    Power applications;    Switching applications;    Threshold voltage shifts;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012001/pdf
DOI  :  10.1088/1742-6596/494/1/012001

来源: IOP

【 摘 要 】

Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.