Numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs intermediate layer for high concentrated photovoltaic applications

2nd International Conference on Mathematical Modeling in Physical Sciences 2013

物理学;数学

Kang, Seokjin^1 ; Park, Kwang Wook^1 ; Ravindran, Sooraj^1 ; Lee, Yong Tak^1

School of Information and Informations, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro, 123, Buk-gu, Gwangju 500-712, Korea, Republic of^1

关键词: Dual junction solar cell;    GaInP/GaAs;    Intermediate layers;    Intermediate level;    Photovoltaic applications;    Tunnel currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/490/1/012178/pdf
DOI  :  10.1088/1742-6596/490/1/012178

来源: IOP

【 摘 要 】

We report the numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs as the intermediate layer at the junction. Incorporation of this intermediate layer introduces an intermediate level at the junction bandgap leading to enhanced tunneling of carriers. By doing so, we obtain a two order of enhancement in the tunnel current. Furthermore, the performance of GaInP/GaAs dual-junction solar cells using the TJ with InAs intermediate layer is calculated under concentrated suns condition and it shows a conversion efficiency exceeding 30% under 1800 suns condition.