Total ionization cross-sections for Si2, SiC, SiC2 and Si2C molecules

28th International Conference on Photonic, Electronic and Atomic Collisions

Pandya, C.V.^1

Department of Physics, M.G.Science Institute, Navarangpura, Ahmedabd

380 009, India^1

关键词: Binaryencounter-Bethe (BEB);    Electron impact;    Energy ranges;    Ionization thresholds;    Spherical complexes;    Total ionization cross sections;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/488/5/052001/pdf
DOI  :  10.1088/1742-6596/488/5/052001

来源: IOP

【 摘 要 】

Total ionization cross-sections for Si2, SiC, SiC2and Si2C molecules have been calculated by applying modified Binary Encounter Bethe (BEB) model by electron impact. The cross-sections are calculated in the energy range from ionization threshold to 2 keV. No measurements are available in the literature to the best of my knowledge for comparison. From theoretical side, very recently Spherical complex optical potential formalism has been employed for obtaining the total ionization cross sections for these molecules. The present results are compared with the available theoretical data.