Nano-structuring of CaF2 surfaces by slow highly charged ions: simulation and experiment

28th International Conference on Photonic, Electronic and Atomic Collisions

Wachter, G.^1 ; Tökési, K.^2 ; Betz, G.^5 ; Lemell, C.^1 ; Burgdörfer, J.^1 ; El-Said, A.S.^3,4 ; Wilhelm, R.A.^4 ; Heller, R.^4 ; Facsko, S.^4 ; Ritter, R.^5 ; Aumayr, F.^5

Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstraße 8-10, Vienna

A-1040, Austria^1

Institute of Nuclear Research of the Hungarian Academy of Science (ATOMKI), PO Box 51, Debrecen

H-4001, Hungary^2

Physics Department, Faculty of Science, Mansoura University, Mansoura

35516, Egypt^3

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden

01328, Germany^4

Institute of Applied Physics, TU Wien-Vienna University of Technology, Wiedner Hauptstraße 8-10, Vienna

A-1040, Austria^5

关键词: Damage formation;    Etch pits;    Molecular dynamics simulations;    Nano-structuring;    Proof of principles;    Slow highly charged ions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/488/13/132015/pdf
DOI  :  10.1088/1742-6596/488/13/132015

来源: IOP

【 摘 要 】

The impact of individual slow highly charged ions (HCI) on insulators can create nano-scale surface modifications. We present recent experimental results on nano-hillock and etch pit formation on CaF2, where the appearance of surface modifications is observed only above a threshold projectile potential and kinetic energy depending on the type of damage. A proof-of-principle molecular dynamics simulation offers insights into the early stages of damage formation.