Microstructure AFM study and raman spectra of In-GaAs bilayers prepared by R.F. magnetron sputtering on Si(100) substrates

21st Latin American Symposium on Solid State Physics

Venegas, M.^3 ; Bernal, R.^1,2 ; López, M.^3 ; Pulzara, A.^1

Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, Sede Manizales. A.A. 127, Colombia^1

Escuela de Materiales, Universidad Nacional de Colombia, Sede Medellín, Colombia^2

Grupo de Estado Sólido, Departamento de Física, Centro de Investigación y de Estudios Avanzados Del I.P.N., Apartado Postal 14-740, México DF, 07000, Mexico^3

关键词: Alloy compositions;    Cross sectional image;    High purity targets;    Micro Raman Spectroscopy;    rf-Magnetron sputtering;    Si (100) substrate;    Statistical study;    Topographic images;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/480/1/012017/pdf
DOI  :  10.1088/1742-6596/480/1/012017

来源: IOP

【 摘 要 】

Preliminary results of In-GaAs bilayers prepared by RF Magnetron Sputtering on Si(100) substrates are presented. The growth temperatures were 300 and 580 °C for the high purity targets of In and GaAs, respectively. Under an Ar atmosphere, three samples were prepared, each one with a GaAs buffer layer deposited for 60 minutes, then two cycles were prepared as follows: In layers from 5, 10, and 15 minutes with a subsequent GaAs layer deposited for 20 minutes. The morphological and optical studies of the samples were made by means of Amplitude Modulation Atomic Force Microscopy (AM-AFM) and Micro Raman Spectroscopy (μRAMAN). In order to analyze and correlate the surface morphology and alloy composition, the samples were cleaved along the [001] direction and subsequently characterized by AM-AFM and μRAMAN. From the topographic images, a statistical study of the roughness and grain size is made. Additionally cross sectional images were performed for each sample, from where the phase channel, which is sensitive to the material properties was of particular interest. The Raman spectra showed the two vibrational phonon modes related to the InAs and GaAs.