Low-cost, high-efficiency organic/inorganic hetero-junction hybrid solar cells for next generation photovoltaic device

13th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications

物理学;能源学

Pudasaini, P.R.^1 ; Ayon, A.A.^1

MEMS Research Laboratory, Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, United States^1

关键词: Anti-reflection layers;    Capacitance voltage measurements;    Electrical performance;    Organic/inorganic heterojunctions;    Organic/inorganic hybrid structures;    Organic/inorganic interfaces;    Polystyrene sulfonate;    Ultra-thin aluminium oxide;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/476/1/012140/pdf
DOI  :  10.1088/1742-6596/476/1/012140

来源: IOP

【 摘 要 】

Organic/inorganic hybrid structures are considered innovative alternatives for the next generation of low-cost photovoltaic devices because they combine advantages of the purely organic and inorganic versions. Here, we report an efficient hybrid solar cell based on sub-wavelength silicon nanotexturization in combination with the spin-coating of poly (3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT:PSS). The described devices were analyzed by collecting current-voltage and capacitance-voltage measurements in order to explore the organic/inorganic heterojunction properties. ALD deposited ultrathin aluminium oxide was used as a junction passivation layer between the nanotextured silicon surface and the organic polymer. The measured interface defect density of the device was observed to decrease with the inclusion of an ultrathin Al2O3passivation layer leading to an improved electrical performance. This effect is thought to be ascribed to the suppression of charge recombination at the organic/inorganic interface. A maximum power conversion efficiency in excess of 10% has been achieved for the optimized geometry of the device, in spite of lacking an antireflection layer or back surface field enhancement schemes.