Characterization of dielectric properties of polycrystalline aluminum nitride for high temperature wireless sensor nodes

13th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications

物理学;能源学

Knaust, S.^1 ; Khaji, Z.^1 ; Sturesson, P.^2 ; Klintberg, L.^1

Division of Microsystems Technology, Department of Engineering Sciences, Uppsala University, Uppsala, Sweden^1

National Swedish Defence College, Stockholm, Sweden^2

关键词: Polycrystalline aluminum;    Resonance circuits;    Sintered polycrystalline;    Temperature dependencies;    Temperature range;    Thick film technology;    Wireless sensor node;    Wireless sensor nodes (WSN);   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/476/1/012101/pdf
DOI  :  10.1088/1742-6596/476/1/012101

来源: IOP

【 摘 要 】

An aluminium nitride (AlN) passive resonance circuit intended for thermally matched high temperature wireless sensor nodes (WSN) was manufactured using thick-film technology. Characterization was done for temperatures up to 900°C in both a hot-chuck for frequencies below 5 MHz, and using wireless readings of resonating circuits at 15 MHz, 59 MHz, and 116 MHz. The substrate for the circuits was sintered polycrystalline AlN. Using a simplified model for the resonators where the main contribution of the frequency-shift was considered to come from a shift of the dielectric constant for these frequencies, the temperature dependency of the dielectric constant for AlN was found to decrease with increasing frequency up to 15 MHz. With an observed frequency shift of 0.04% at 15 MHz, and up to 0.56% at 59 MHz over a temperature range of 900°C, AlN looks as a promising material for integration of resonance circuits directly on the substrate.