Microstructural characterisation of Bi2Se3 thin films

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Tarakina, N.V.^1 ; Schreyeck, S.^1 ; Borzenko, T.^1 ; Grauer, S.^1 ; Schumacher, C.^1 ; Karczewski, G.^1,2 ; Gould, C.^1 ; Brunner, K.^1 ; Buhmann, H.^1 ; Molenkamp, L.W.^1

Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany^1

Institute of Physics, Polish Academy of Sciences, Al. Lotnikov 32/46, 02-668 Warsaw, Poland^2

关键词: Fe-doped inp;    Microstructural characterisation;    Rough surfaces;    Scanning transmission electron microscopy;    Si (1 1 1);    Twin domains;    Twin formation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012043/pdf
DOI  :  10.1088/1742-6596/471/1/012043

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The microstructure of Bi2Se3thin films grown by molecular beam epitaxy on Si(111), InP(111)B and Fe-doped InP(111)B substrates has been studied in detail using scanning transmission electron microscopy. Films grown on Si(111) and InP(111)B substrates show the formation of twin domains: rotation twins (with the grain boundary perpendicular to the substrate) and lamellar twins (with the grain boundary parallel to the substrate). The presence of twins was confirmed by atomic-force microscopy (AFM) and X-ray diffraction (XRD). At the interface between Bi2Se3film and Si(111) or InP(111)B substrates poorly crystallized layers of about 1 nm and 1.8 nm thickness, respectively, followed by well-crystallized Bi2Se3layers, were found. The use of a Fe-doped InP (111) substrate with a rough surface enables the suppression of twin formation.