Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Sorokin, L.M.^1 ; Kalmykov, A.E.^1 ; Myasoedov, A.V.^1 ; Bessolov, V.N.^1 ; Osipov, A.V.^2 ; Kukushkin, S.A.^2

Ioffe Physical-Technical Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russia^1

Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, St.-Petersburg, 199178, Russia^2

关键词: Chloride vapour phase epitaxies;    Epitaxial relationships;    GaN layers;    Silicon carbide buffer layer;    Solid phase synthesis;    Wurtzite structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012033/pdf
DOI  :  10.1088/1742-6596/471/1/012033

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The structure of 10-μm-thick GaN layer grown by chloride vapour-phase epitaxy on 1.5-inch SiC/(001)Si templates has been investigated by transmission electron microscopy (TEM). The silicon carbide buffer layer has been fabricated by a new method of solid-phase synthesis. It was found that the GaN layer consists of oriented grains with size of tenths of a micron. The grains have wurtzite structure, and the {0001} GaN planes are oriented parallel to {111} Si, that is, the deviation of the axis c of GaN crystallite from the normal to the substrate is about 52°. The revealed epitaxial relationship between substrate and most grains is (022¯3)GaN||(001)3C-Si||(001)Si and [21¯1¯0]GaN||[110]3C-SiC||[110]Si. Some inclusions of sphalerite gallium nitride were also found in the epilayer.