会议论文详细信息
18th Microscopy of Semiconducting Materials Conference
Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy
物理学;材料科学
Qiu, Y.^1,2 ; Nguyen, V.H.^3 ; Dobbie, A.^3 ; Myronov, M.^3 ; Walther, T.^1
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom^1
LAAS-CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France^2
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom^3
关键词: Absorption corrections;    Analytical transmission electron microscopy;    Energy dispersive X ray spectroscopy;    Intensity ratio;    Self-consistency;    SiGe layers;    Specimen thickness;    X-ray lines;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012031/pdf
DOI  :  10.1088/1742-6596/471/1/012031
学科分类:材料科学(综合)
来源: IOP
PDF
【 摘 要 】

We show that the accuracy of energy-dispersive X-ray spectroscopy can be improved by analysing and comparing multiple lines from the same element. For each line, an effective k-factor can be defined that varies as a function of the intensity ratio of multiple lines (e.g. K/L) from the same element. This basically performs an internal self-consistency check in the quantification using differently absorbed X-ray lines, which is in principle equivalent to an absorption correction as a function of specimen thickness but has the practical advantage that the specimen thickness itself does not actually need to be measured.

【 预 览 】
附件列表
Files Size Format View
Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy 567KB PDF download
  文献评价指标  
  下载次数:5次 浏览次数:56次