SiGe epitaxially grown in nano-trenches on Si substrate

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Richard, O.^1 ; Vincent, B.^1 ; Favia, P.^1 ; Lagrain, P.^1 ; Bender, H.^1

Imec, Kapeldreef 75, B-3001 Leuven, Belgium^1

关键词: Crystallographic defects;    Epitaxially grown;    High aspect ratio;    Si substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012028/pdf
DOI  :  10.1088/1742-6596/471/1/012028

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

SiGe lines epitaxially grown in silicon oxide nano-trenches on Si substrate are characterized by transmission electron microscopy (TEM) based techniques. Due to the high aspect ratio of the trenches most of the extended crystallographic defects are limited to the bottom of the lines. Few of them are still observed at the top of the lines and emerge in the cap above the lines. The SiGe composition is not homogenous in the width of the line and in the cap. This is linked to the formation of {111} facets. This variation of composition is not observed for the lines with an actual width narrower than 20nm.