Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Servanton, G.^1 ; Clement, L.^1 ; Lepinay, K.^1 ; Lorut, F.^1 ; Pantel, R.^1 ; Pofelski, A.^1 ; Bicais, N.^1

STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France^1

关键词: Fully depleted silicon on insulators (FD SOI);    Fully depleted silicon-on-insulator;    High-speed performance;    Low-power consumption;    Power efficient systems;    Technological breakthroughs;    TEM characterization;    Wireless multimedia applications;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012026/pdf
DOI  :  10.1088/1742-6596/471/1/012026

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The growing demand for wireless multimedia applications (smartphones, tablets, digital cameras) requires the development of devices combining both high speed performances and low power consumption. A recent technological breakthrough making a good compromise between these two antagonist conditions has been proposed: the 28-14nm CMOS transistor generations based on a fully-depleted Silicon-on-Insulator (FD-SOI) performed on a thin Si film of 5-6nm. In this paper, we propose to review the TEM characterization challenges that are essential for the development of extremely power-efficient System on Chip (SoC).