会议论文详细信息
18th Microscopy of Semiconducting Materials Conference | |
High resolution imaging in cross-section of a metal-oxide-semiconductor field-effect-transistor using super-higher-order nonlinear dielectric microscopy | |
物理学;材料科学 | |
Chinone, N.^1 ; Yamasue, K.^1 ; Honda, K.^1 ; Cho, Y.^1 | |
Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan^1 | |
关键词: Capacitance variation; Capacitance-voltage characteristics; Cross-sectional observations; Density resolution; High-resolution imaging; Higher-order methods; Nonlinear dielectric; Scanning nonlinear dielectric microscopy; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012023/pdf DOI : 10.1088/1742-6596/471/1/012023 |
|
学科分类:材料科学(综合) | |
来源: IOP | |
【 摘 要 】
Scanning nonlinear dielectric microscopy (SNDM) can evaluate carrier or charge distribution in semiconductor devices. High sensitivity to capacitance variation enables SNDM to measure the super-high-order (higher than 3rd) derivative of local capacitance-voltage (C-V) characteristics directly under the tip (dnC/dVn,n = 3, 4, ...). We demonstrate improvement of carrier density resolution by measurement of dnC/dVn,n = 1, 2, 3, 4 (super-higher-order method) in the cross-sectional observation of metal-oxide-semiconductor field-effect-transistor.
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
High resolution imaging in cross-section of a metal-oxide-semiconductor field-effect-transistor using super-higher-order nonlinear dielectric microscopy | 1621KB | download |