High resolution imaging in cross-section of a metal-oxide-semiconductor field-effect-transistor using super-higher-order nonlinear dielectric microscopy

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Chinone, N.^1 ; Yamasue, K.^1 ; Honda, K.^1 ; Cho, Y.^1

Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan^1

关键词: Capacitance variation;    Capacitance-voltage characteristics;    Cross-sectional observations;    Density resolution;    High-resolution imaging;    Higher-order methods;    Nonlinear dielectric;    Scanning nonlinear dielectric microscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012023/pdf
DOI  :  10.1088/1742-6596/471/1/012023

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Scanning nonlinear dielectric microscopy (SNDM) can evaluate carrier or charge distribution in semiconductor devices. High sensitivity to capacitance variation enables SNDM to measure the super-high-order (higher than 3rd) derivative of local capacitance-voltage (C-V) characteristics directly under the tip (dnC/dVn,n = 3, 4, ...). We demonstrate improvement of carrier density resolution by measurement of dnC/dVn,n = 1, 2, 3, 4 (super-higher-order method) in the cross-sectional observation of metal-oxide-semiconductor field-effect-transistor.