Characterization of L21 order in Co2FeSi thin films on GaAs

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Jenichen, B.^1 ; Hentschel, T.^1 ; Herfort, J.^1 ; Kong, X.^1 ; Trampert, A.^1 ; Zizak, I.^2

Paul-Drude-Institut fuer Festkoerperelektronik, Berlin, Germany^1

Helmholtz-Zentrum fuer Materialien und Energie, Berlin, Germany^2

关键词: Dark-field tem;    Diffusion process;    Grazing incidence;    Hybrid structure;    Inhomogeneities;    Inhomogeneous distribution;    Long range orders;    Superlattice reflections;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012022/pdf
DOI  :  10.1088/1742-6596/471/1/012022

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.