Characterisation of 3D-GaN/InGaN nanostructured Light Emitting Diodes by Transmission Electron Microscopy

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Griffiths, I.J.^1 ; Cherns, D.^1 ; Wang, X.^2 ; Waag, A.^2 ; Wehmann, H.-H.^2

School of Physics, H H Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, United Kingdom^1

Institute of Semiconductor Technology, Braunschweig University of Technology, Hans-Sommer-Strasse 66, 38106 Braunschweig, Germany^2

关键词: 3-D nanostructures;    GaN/sapphire;    Low density;    Nano-structured;    Nanostructure morphologies;    Non-polar;    Non-uniform;    Ordered array;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012018/pdf
DOI  :  10.1088/1742-6596/471/1/012018

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by MOVPE. It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and non-uniform growth on adjacent facets studied.