Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Energy Applications

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Oleshko, V.P.^1 ; Williams, E.H.^1,3 ; Davydov, A.V.^1 ; Krylyuk, S.^1,4 ; Motayed, A.^1,4 ; Ruzmetov, D.^2,4 ; Lam, T.^2 ; Lezec, H.J.^2 ; Talin, A.A.^2,5

Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States^1

Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States^2

Department of Chemistry and Biochemistry, George Mason University, Fairfax, VA 22030, United States^3

Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, United States^4

Sandia National Laboratories, Livermore, CA 94551, United States^5

关键词: Analytical electron microscopy;    Chemical compositions;    Energy applications;    Functional properties;    Lab-on-a-chip devices;    Nanoscale structure;    Semiconductor nanowire;    Single-crystalline;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012017/pdf
DOI  :  10.1088/1742-6596/471/1/012017

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Functionalized individual semiconductor nanowires (SNWs) and 3D SNW arrays attract a continuously growing interest for applications in optoelectronics, sensing, and energy storage. High-resolution field-emission analytical (scanning) transmission electron microscopy ((S)TEM) enables critical insights into the morphology, crystalline and electronic structures and chemical composition of single-crystalline high-aspect-ratio SNWs as prospective building blocks suitable for both a large scale-up synthesis and fabrication. Furthermore, SNW-based lab-on-a-chip devices may allow direct correlation between functional properties tailored for specific performance and the heterostructure morphology and atomic arrangement of the nanoscale structure being analyzed in various (S)TEM modes.