Microscopic investigations of advanced thin films for photonics

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Boninelli, S.^1 ; Shakoor, A.^2 ; Welma, K.^2 ; Krauss, T.F.^2 ; O'Faolain, L.^2 ; Lo Savio, R.^3 ; Portalupi, S.^3 ; Gerace, D.^3 ; Galli, M.^3 ; Cardile, P.^1 ; Bellocchi, G.^1 ; Franzò, G.^1 ; Miritello, M.^1 ; Iacona, F.^1 ; Priolo, F.^1

MATIS IMM CNR, Dipartimento di Fisica e Astronomia, Università di Catania, via Santa Sofia 64, 95121 Catania, Italy^1

SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews-Fife KY16 9SS, United Kingdom^2

Dipartimento di Fisica, Università di Pavia, via Bassi 6, 27100 Pavia, Italy^3

关键词: Advanced thin films;    Crystalline Si;    H-related defects;    Optically Active;    Room-temperature photoluminescence;    Si-based materials;    Strong enhancement;    Structural characterization;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012004/pdf
DOI  :  10.1088/1742-6596/471/1/012004

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We present the different approaches we recently followed to achieve intense room temperature photoluminescence (PL) from Si-based materials. On one side we obtained sub-bandgap PL from H-related defects induced by the H2plasma treatment of Si photonic crystal (PhC) nanocavities. We demonstrated that a strong and narrow PL emission can be obtained in the PhC nanocavities due to the formation of a damaged layer mainly consisting of nanometric platelets and bubbles. An overall 40000-fold enhancement of the PL signal, with respect to pure crystalline Si, has been achieved and moreover the signal can be tuned in a wide range by only changing the PhC parameters. On the other side, we focused our attention on the properties of SiO2and SiOC host matrices doped with Eu ions. C addition produces a strong enhancement of the Eu PL with respect to pure SiO2films. The chemical and structural characterization of these materials reveals an extensive Eu clustering in SiO2-based films, while C addition induces a significant reduction of this phenomenon, enhancing the fraction of optically active Eu ions. These results can be applied for the realization of efficient Si-based light sources.