Increasing the emission power of LEDs (λ = 1.7_2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Zolotukhin, A.V.^1 ; Sherstnev, V.V.^1 ; Savelieva, K.S.^1 ; Grebenshchikova, E.A.^1 ; Serebrennikova, O.Yu.^1 ; Ilinskaya, N.D.^1 ; Slobozhanuk, S.A.^1 ; Ivanov, E.V.^1 ; Yakovlev, Y.P.^1

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St.-Petersburg 194021, Russia^1

关键词: Curved surfaces;    Emission power;    LED chips;    LED efficiencies;    Light direction;    Reflective surfaces;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012036/pdf
DOI  :  10.1088/1742-6596/461/1/012036

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Development of a curved reflective surface on the bottom side of the LED chip based on the GaSb/GaInAsSb/GaAlAsSb heterostructure increases the emission power of LEDs in 1.9-2.0 times compared with power of the tradition LED chip. This effect was investigated for the wavelengths of 2.0-2.3 μm. We believe that the improving of LED efficiency is the result of changes of light direction by the reflection from the curved surface formed by the hemispherical pits in the crystal.