Low temperature growth of ITO transparent conductive oxide layers in oxygen-free environment by RF magnetron sputtering

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Kudryashov, D.^1 ; Gudovskikh, A.^1 ; Zelentsov, K.^1

Renewable Energy Laboratory, St. Petersburg Academic University, Nanotechnology Research and Education Centre of Russian Academy of Sciences, 8/3 Khlopina Str, St-Petersburg, 194021, Russia^1

关键词: Argon pressure;    Electrical and optical properties;    Indium tin oxide thin films;    Low temperature growth;    rf-Magnetron sputtering;    Si (100) substrate;    Sputtering power;    Transparent conductive oxides;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012021/pdf
DOI  :  10.1088/1742-6596/461/1/012021

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95·10-3mbar and sputtering power of 50 W, the transmittance was near 90% at 480 nm and resistance was 5.4·10-4Ohm·cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.