Influence of radiation on Voltage Terminating Structure of silicon relativistic particle detectors

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Fadeeva, N.^1,2 ; Eremin, V.^1 ; Verbitskaya, E.^1 ; Terukov, E.^1

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Polytekhnicheskaya str. 26, 194021 St.-Petersburg, Russia^1

Saint Petersburg Electrotechnical University, Prof. Popov str. 5, 197376 St.-Petersburg, Russia^2

关键词: Current injections;    Electric field distributions;    Electric field profiles;    High energy physics experiments;    Potential distributions;    Relativistic particles;    Semiconductor radiation detectors;    Silicon radiation detectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012006/pdf
DOI  :  10.1088/1742-6596/461/1/012006

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Semiconductor radiation detectors are widely applied in high energy physics experiments. The largest particle colliders use silicon detectors with the total area of hundreds square meters that enhances the requirement to their stable long-term operation. This is provided by incorporating the floating p+rings surrounding the sensitive area of the p+-n-n+detectors (VTS-Voltage Termination Structure), that prevents an electric breakdown. The physical model of VTS operation in high-resistivity p+-n-n+silicon radiation detectors developed in the study uses an approach of the current injection through the ring spacings of VTS that may occur under a certain electric field distribution. This leads to a strict stabilization of the ring potentials. Investigation of the potential distribution in VTS of silicon detectors irradiated with 1 MeV neutrons up to a fluence of 5×1015neq/cm2was carried out. It was shown that the change of the electric field profile in the detector bulk with increasing radiation fluence is a key factor for the potential distribution. At fluences less than 5×1014neq/cm2the potential distribution in VTS is governed by the punchthrough mechanism, whereas at higher fluences it is controlled by the bulk generation current and interaction with radiation induced deep levels.