Fractional quantum Hall states in charge-imbalanced bilayer systems

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Thiebaut, N.^1 ; Regnault, N.^2,3 ; Goerbig, M.O.^1

Laboratoire de Physique des Solides, CNRS UMR 8502, University Paris-Sud, F-91405 Orsay cedex, France^1

Laboratoire Pierre Aigrain, ENS and CNRS, 24 rue Lhomond, 75005 Paris, France^2

Department of Physics, Princeton University, Princeton, NJ 08544, United States^3

关键词: Asymmetric bilayers;    Bilayer systems;    Coulomb repulsions;    Filling factor;    Fractional quantum Hall effects;    Fractional quantum Hall state;    Gate voltages;    Trial wavefunction;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012036/pdf
DOI  :  10.1088/1742-6596/456/1/012036

来源: IOP

【 摘 要 】

We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to the Coulomb repulsion between electrons. We focus on fractional quantum Hall effect in asymmetric bilayer systems at filling factor ν 4/11 and show that an asymmetric Halperin-like trial wavefunction gives a valid description of the ground state of the system.