Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Masutomi, R.^1 ; Chiba, T.^1 ; Sasaki, K.^1 ; Yasuda, I.^1 ; Sekine, A.^1 ; Sawano, K.^2 ; Shiraki, Y.^2 ; Okamoto, T.^1

Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan^1

Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan^2

关键词: Cyclotron-resonance measurements;    High mobility;    In-plane magnetic fields;    Metallic phase;    Si/SiGe;    Transport scattering;    Two dimensional electrons;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012027/pdf
DOI  :  10.1088/1742-6596/456/1/012027

来源: IOP

【 摘 要 】

We have performed cyclotron resonance measurements on two-dimensional electrons in the metallic phase. The temperature, electron density and in-plane magnetic field dependence of cyclotron and transport scattering time are reported for a high-mobility Si/SiGe quantum well.