Quantum Hall effect in monolayer, bilayer and trilayer graphene

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Cobaleda, C.^1 ; Diez, E.^1 ; Amado, M.^1,5 ; Pezzini, S.^1,2 ; Rossella, F.^2 ; Bellani, V.^2 ; López-Romero, D.^3 ; Maude, D.K.^4,6

Laboratorio de Bajas Temperaturas, Universidad de Salamanca, E-37008 Salamanca, Spain^1

Dipartimento di Fisica and CNISM, Università Degli Studi di Pavia, I-27100 Pavia, Italy^2

CT-ISOM, Universidad Politécnica de Madrid, E-28040 Madrid, Spain^3

Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-INSA-UPS, F-38042 Grenoble, France^4

SNS-NEST and CNR, Piazza San Silvestro 12, 56127 Pisa, Italy^5

LNCMI, CNRS-UJF-INSA-UPS, F-31400 Toulouse, France^6

关键词: Ambipolar conduction;    Bilayer Graphene;    Filling factor;    Quantum hall;    Symmetry properties;    Temperature dependence;    Transport experiments;    Tri layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012006/pdf
DOI  :  10.1088/1742-6596/456/1/012006

来源: IOP

【 摘 要 】

We have performed magneto-transport experiments in monolayer, bilayer, trilayer and four layered graphene, at temperatures between 2 and 190 K and magnetic fields up to 28 T. In particular, in monolayer graphene we studied the quantum Hall effect and the metal-insulator transition. On the other hand, in bilayer graphene we observed quantum Hall plateaus at filling factor v 4, 8, 12, 16, 20, ... and the v 6 plateau in trilayer graphene, studying their temperature dependence. We have also studied the symmetry properties which are related with different contact configurations describing the method used to study inhomogeneus samples. Finally, four layered graphene we did not found quantum Hall plateaus, but we observed and investigated an ambipolar conduction effect.